Static random access memory method

ABSTRACT

A method of performing a write operation on a static random access memory (SRAM) bit cell includes activating the bit cell by supplying a signal to a p-type pass gate of the bit cell, the signal causing the p-type pass gate to be in a conductive state, using a p-type transistor of a write multiplexer to maintain a data line at a logically high voltage, and transferring bit information from the data line to the activated bit cell using the p-type pass gate.

PRIORITY CLAIM

The present application is a continuation of U.S. application Ser. No.16/241,717, filed Jan. 7, 2019, which is a continuation of U.S.application Ser. No. 15/633,167, filed Jun. 26, 2017, now U.S. Pat. No.10,176,864, issued Jan. 8, 2019, which is a continuation of U.S.application Ser. No. 15/012,970, filed Feb. 2, 2016, now U.S. Pat. No.9,704,565, issued Jul. 11, 2017, which is a divisional of U.S.application Ser. No. 14/308,065, filed Jun. 18, 2014, now U.S. Pat. No.9,281,056, issued Mar. 8, 2016, which are incorporated herein byreference in their entireties.

BACKGROUND

Static random access memory (SRAM) is a type of volatile semiconductormemory that stores data bits using bi-stable circuitry. Bi-stablecircuitry will maintain the integrity of a stored bit withoutrefreshing. A single SRAM cell is referred to as a bit cell because thesingle SRAM cell stores one bit of information, represented by a logicstate of two cross coupled inverters. Memory arrays include multiple bitcells arranged in rows and columns. In some approaches, each bit cell ina memory array includes a connection to a power supply voltage and aconnection to a reference voltage. Logic signals on bit lines controlreading from and writing to a bit cell, with a word line controllingconnections of the bit lines to the cross-coupled inverters through passgates. When the pass gates are in a non-conductive state, the bit cellfloats.

Scaling of semiconductor devices, e.g., a metal-oxide semiconductorfield-effect transistor (MOSFET), has enabled continued improvement inspeed, performance, density, and cost per unit function of integratedcircuits over the past few decades. The reduced size of MOSFETs resultsin changes to carrier mobility, which in turn impacts a drive currentthrough the MOSFET.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a schematic diagram of a single port bit cell in accordancewith some embodiments.

FIG. 2 is a schematic diagram of a single-port static random accessmemory (SRAM) in accordance with some embodiments.

FIG. 3A is a schematic diagram of a sense amplifier of an SRAM inaccordance with some embodiments.

FIG. 3B is a waveform diagram of signals applied to a sense amplifier ofan SRAM in accordance with some embodiments.

FIG. 4 is a schematic diagram of a footer of an SRAM in accordance withsome embodiments.

FIG. 5 is a block diagram of a power management system for an SRAM inaccordance with some embodiments.

FIG. 6 is a schematic diagram of a two-port bit cell in accordance withsome embodiments.

FIG. 7 is a schematic diagram of a two-port SRAM in accordance with someembodiments.

FIG. 8 is a schematic diagram of a dual-port bit cell in accordance withsome embodiments.

FIG. 9 is a schematic diagram of a dual-port SRAM in accordance withsome embodiments.

FIG. 10 is a flow chart of a method of using an SRAM in accordance withsome embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

FIG. 1 is a schematic diagram of a single-port bit cell 100 inaccordance with some embodiments. Single-port bit cell 100 includescross-coupled inverters 110 which are capable of storing information. Afirst pass gate 120 a is configured to selectively connect cross-coupledinverters 110 to a bit line BL. A second pass gate 120 b is configuredto selectively connect cross-coupled inverters 110 to a bit line barBLB. First pass gate 120 a and second pass gate 120 b are bothconfigured to be activated based on a signal supplied by a word line barWLB.

Single-port bit cell 100 includes p-type pass gates. In someembodiments, first pass gate 120 a and second pass gate 120 b are bothp-type metal-oxide-semiconductor (PMOS) transistors. In someembodiments, first pass gate 120 a and second pass gate 120 b includethree-dimensional gate structures, e.g. fin field-effect-transistors(FinFET).

In contrast with bit cells which include n-type transistors for passgates, single-port bit cell 100 is connected to bit line BL and bit linebar BLB by a logically low signal at a gate of first pass gate 120 a andsecond pass gate 120 b.

As semiconductor devices are scaled down, a driving strength of a p-typetransistor increases in comparison with a driving strength of an n-typetransistor. The result is that higher currents are able to be conveyedthrough p-type transistors in scaled down semiconductor devices. Byusing p-type transistors for first pass gate 120 a and second pass gate120 b for scaled down semiconductor devices, bit information stored incross-coupled inverters 110 is conveyed to bit line BL or bit line barBLB more rapidly in comparison with scaled down semiconductor deviceswhich include n-type transistors for pass gates.

FIG. 2 is a schematic diagram of a single-port static random accessmemory (SRAM) 200 in accordance with some embodiments. Single-port SRAM200 includes a single-port bit cell 210 configured to receive a signalalong word line bar WLB. Single-port bit cell 210 is connected to bitline BL and bit line bar BLB. Single-port SRAM 200 further includes adischarge circuit 220 configured to discharge bit line BL and bit linebar BLB to a reference voltage in response to a pre-discharge signalPRE. Single-port SRAM 200 further includes cross-coupled transistors 230connected to bit line BL and bit line bar BLB. Cross-coupled transistors230 are configured to help maintain a voltage level on bit line BL andbit line bar BLB. A write multiplexer 240 is also connected to bit lineBL and bit line bar BLB. Write multiplexer 240 is configured to helpmaintain bit line BL or bit line bar BLB in a high logical state duringa write operation. A flip-flop 250 is connected to write multiplexer240. Single-port SRAM further includes a read multiplexer 260 connectedto bit line BL and bit line bar BLB. Read multiplexer 260 is configuredto transfer a voltage value close to the reference voltage to a senseamplifier 270 during a reading operation. Sense amplifier 270 is alsoconnected to bit line BL and bit line bar BLB.

Single-port bit cell 210 is configured to store bit information.Single-port bit cell 210 includes p-type pass gates. In someembodiments, single-port bit cell 210 is a six transistor (6T) bit cell.In some embodiments, single-port bit cell 210 is similar to single-portbit cell 100 (FIG. 1). In some embodiments, single-port bit cell 210includes transistors having three dimensional gate structures, e.g.,FinFET.

Single-port bit cell 210 is configured to receive a signal on write linebar WLB in order to selectively transfer bit information from thesingle-port bit cell to bit line BL and bit line bar BLB. Due to thep-type pass gates, the bit information is transferred to bit line BL andbit line bar BLB when the signal on word line bar WLB is logically low.In some embodiments, an inverter is used to convert a logically highactivation signal from peripheral circuitry to a logically low signal onword line bar WLB to activate single-port bit cell 210. The inverterfacilitates use of single-port SRAM 200 in integrated circuits withoutadjustments to the peripheral circuitry which are designed for use withbit cells having n-type pass gates.

Pre-discharge circuit 220 includes a first n-type transistor 222configured to receive pre-discharge signal PRE. A source of first n-typetransistor 222 is connected to the reference voltage. A drain of firstn-type transistor 222 is connected to bit line BL. Pre-discharge circuit220 further includes a second n-type transistor 224 configured toreceive pre-discharge signal PRE. A source of second n-type transistor224 is connected to the reference voltage. A drain of second n-typetransistor 224 is connected to bit line bar BLB. Pre-discharge circuit220 further includes a third n-type transistor 226 configured to receivepre-discharge signal PRE. A source of third n-type transistor 226 isconnected to bit line BL. A drain of third n-type transistor 226 isconnected to bit line bar BLB. In some embodiments, third n-typetransistor 226 is omitted. In some embodiments, the reference voltage isa ground voltage. In some embodiments, the reference voltage isdifferent from the ground voltage.

First n-type transistor 222 is configured to connect bit line BL to thereference voltage based on pre-discharge signal PRE, to set the voltagelevel on bit line BL to a logically low value. Second n-type transistor224 is configured to connect bit line bar BLB to the reference voltagebased on pre-discharge signal PRE, to set the voltage level on bit linebar BLB to a logically low value. Third n-type transistor 226 isconfigured to selectively connect bit line BL to bit line bar BLB toequalize the voltage level on the bit line to the voltage level on thebit line bar. In some embodiments where third n-type transistor 226 isomitted, the voltage level on bit line BL is different from the voltagelevel on bit line bar BLB due to variations between first n-typetransistor 222 and second n-type transistor 224 caused by productionvariations.

In operation, pre-discharge circuit 220 sets the voltage level of bitline BL and the voltage level of bit line bar BLB to a logically lowvalue prior to a read operation. The n-type transistors in pre-dischargecircuit 220 have a better intrinsic characteristic for transferring lowvoltage values in comparison with p-type transistors. It helps toestablish the logically low voltage level on bit line BL and bit linebar BLB faster, which in turn facilitates high operating frequencies forsingle-port SRAM 200.

Cross-coupled transistors 230 include a first n-type cross-coupledtransistor 232 having a gate connected to bit line bar BLB. A source offirst n-type cross-coupled transistor 232 is connected to the referencevoltage. A drain of first n-type cross-coupled transistor 232 isconnected to bit line BL. Cross-coupled transistors 230 further includea second n-type cross-coupled transistor 234 having a gate connected tobit line BL. A source of second n-type cross-coupled transistor 234 isconnected to the reference voltage. A drain of second n-typecross-coupled transistor 234 is connected to bit line bar BLB.

Cross-coupled transistors 230 are configured to help prevent currentfighting during read operations and write operations. For example,during a read operation where bit line BL has a logically low value andbit line bar BLB has a logically high value, first n-type cross-coupledtransistor 232 is activated by the logically high value on bit line barBLB to connect bit line BL to the reference voltage. Also, second n-typecross-coupled transistor 234 is de-activated by the logically low valueon bit line BL to disconnect bit line bar BLB from the referencevoltage.

In operation, cross-coupled transistors 230 help to prevent read errorsand write errors by maintaining a difference between the voltage levelon bit line BL and the voltage level on bit line bar BLB. The differencebetween the voltage levels helps to compensate current fighting duringthe read operation and improve the write ability during write operation,which in turn helps to facilitate stable read operations and writeoperations.

Write multiplexer 240 includes a first p-type transistor 242 configuredto receive a write activation signal WA. A source of first p-typetransistor 242 is connected to bit line BL. A drain of first p-typetransistor 242 is connected to a first output of flip-flop 250. Writemultiplexer 240 further includes a second p-type transistor 244configured to receive write activation signal WA. A source of secondp-type transistor is connected to bit line bar BLB. A drain of secondp-type transistor is connected to a second output of flip-flop 250. Insome embodiments, at least one of first p-type transistor 242 or secondp-type transistor 244 is replaced with a transmission gate. Atransmission gate is capable of transferring logically high voltages ata similar speed as a p-type transistor; however, the transmission gateoccupies a larger area of a circuit and reduces an ability to scale downthe circuit, in some instances.

Write multiplexer 240 is configured to help maintain a logically highvoltage value on bit line BL or bit line bar BLB. In some instances,current leakage through other devices, such as cross-coupled transistors230 or pre-discharge circuit 220, causes a decrease in a voltage levelon bit line BL or bit line bar BLB. Write multiplexer 240 is configuredto help prevent the decreasing of the voltage level on bit line BL orbit line bar BLB, which in turn helps to facilitate faster writeoperations and reduce a risk of write errors. Using p-type transistorsin write multiplexer 240 helps to provide sufficient signal transmissionwith a lower circuit area than a transmission gate.

In operation, write activation signal WA activates first p-typetransistor 242 and second p-type transistor 244 to connect the firstoutput of flip-flop 250 to bit line BL and to connect the second outputof flip-flop 250 to bit line bar BLB. Using p-type transistors in writemultiplexer 240, helps to provide sufficient transfer of a logicallyhigh value to effectively maintain a high logical value on bit line BLor bit line bar BLB.

Flip-flop 250 is configured to supply a high logical value to firstp-type transistor 242 or second p-type transistor 244. Flip-flop 250 isconfigured to receive a data input and a clock input. The first outputof flip-flop 250 is connected to first p-type transistor 242. The secondoutput of flip-flop 250 is connected to second p-type transistor 244.Based on the data signal and the clock signal, flip-flop 250 is able toassist write multiplexer 240 in maintaining the logically high voltagelevel on bit line BL or bit line bar BLB.

Read multiplexer 260 includes a first n-type read transistor 262configured to receive a read activation signal RA. A source of firstn-type read transistor 262 is connected to sense amplifier 270. A drainof first n-type read transistor 262 is connected to bit line BL. Readmultiplexer 260 include a second n-type read transistor 264 configuredto receive read activation signal RA. A source of second n-type readtransistor 264 is connected to sense amplifier 270. A drain of secondn-type read transistor 264 is connected to bit line bar BLB.

Read multiplexer 260 is configured to transfer the voltage level on bitline BL to sense amplifier 270 and to transfer the voltage level on bitline bar BLB to sense amplifier 270. Single-port bit cell 210 isconfigured to store bit information which is transferred to bit line BLor bit line bar BLB. In some instances, a magnitude of a change in thevoltage level on bit line BL or bit line bar BLB, due to transfer of thebit information, is small. Use of n-type transistors in read multiplexer260 enables more rapid transfer of voltage levels close to the referencevoltage than a read multiplexer which includes p-type transistors. As aresult, a speed of a read operation is increased by using n-typetransistors. Using n-type transistors in read multiplexer 260 helps toprovide sufficient signal transmission with a lower circuit area than atransmission gate.

In operation, read activation signal RA activates first n-type readtransistor 262 and second n-type read transistor 264 to connect bit lineBL and bit line bar BLB to sense amplifier 270. Using n-type transistorsin read multiplexer 260, helps to provide sufficient transfer oflogically low values to increase the speed of the read operation.

Sense amplifier 270 is configured to receive bit information transferredfrom single-port bit cell 210 to bit line BL or bit line bar BLB. Senseamplifier 270 is configured to detect an increase in a voltage levelabove the reference voltage.

FIG. 3A is a schematic diagram of a sense amplifier 300 of an SRAM inaccordance with some embodiments. Sense amplifier 300 includescross-coupled inverters 310. Sense amplifier 300 further includes afirst pass gate 320 a connected to a first side of cross-coupledinverters 310. First pass gate 320 a is configured to selectivelyconnect bit line BL to cross-coupled inverters 310. Sense amplifier 300further includes a second pass gate 320 b connected to a second side ofcross-coupled inverters 310. Second pass gate 320 b is configured toselectively connect bit line bar BLB to cross-coupled inverters 310.Sense amplifier 300 further includes a first sense amplifier (SA)pre-discharge transistor 330 a configured to selectively connect asource of each p-type transistor of cross-coupled inverters 310 to thereference voltage. A second SA pre-discharge transistor 330 b isconfigured to selectively connect together each gate of cross-coupledinverters 310. A third SA pre-discharge transistor 330 c is configuredto selectively connect the first side of cross-coupled inverters 310 tothe reference voltage. A fourth SA pre-discharge transistor 330 d isconfigured to selectively connect the second side of cross-coupledinverters 310 to the reference voltage. An enabling transistor 340 isconfigured to selectively connect cross-coupled inverters 310 to anoperating voltage.

In some embodiments, sense amplifier 270 (FIG. 2) is the same as senseamplifier 300.

FIG. 3B is a waveform diagram of signals applied to sense amplifier 300of an SRAM in accordance with some embodiments. At time t0,pre-discharge signal PRE is logically high; pass gate signal PG islogically low; and a sense amplifier enable bar signal SAEB is logicallylow. At time t1, pre-discharge signal PRE begins falling to a logicallylow value. At time t2, pass gate signal PG begins rising to a logicallyhigh value. At time t3, sense amplifier enable bar signal SAEB beginsfalling to a logically low value.

Applying the waveforms of FIG. 3B to sense amplifier 300 of FIG. 3A, anoperation of the sense amplifier is described, according to someembodiments. In operation, first SA pre-discharge transistor 330 a;second SA pre-discharge transistor 330 b; third SA pre-dischargetransistor 330 c; and fourth SA pre-discharge transistor 330 d are allconductive due to the high logical value of pre-discharge signal PRE.First pass gate 320 a; second pass gate 320 b and enabling transistor340 are all non-conductive due to the logically low value of pass gatesignal PG and the logically high value of sense amplifier enabling barsignal SAEB. As a result, the gates of cross-coupled inverters 310 areconnected together. The first side and the second side of cross-coupledinverters 310 are connected to the reference voltage. The sources of thep-type transistors of cross-coupled inverters 310 are also connected tothe reference voltage.

At time t1, first SA pre-discharge transistor 330 a; second SApre-discharge transistor 330 b; third SA pre-discharge transistor 330 c;and fourth SA pre-discharge transistor 330 d are all de-activated by thefalling edge of pre-discharge signal PRE. The result is that the gatesof cross-coupled inverters 310 are disconnected. In addition,cross-coupled inverters 310 are disconnected from the reference voltageand are floated.

At time t2, first pass gate 320 a is activated and bit line BL isconnected to the first side of cross-coupled inverters 310. Second passgate 320 b is also activated and bit line bar BLB is connected to thesecond side of cross-coupled inverter 310.

At time t3, enabling transistor 340 is activated and cross-coupledinverters 310 are connected to the operating voltage. The operatingvoltage will pull-up a logically high voltage on bit line BL or bit linebar BLB facilitating detection of the bit information from a bit cell,e.g., single-port bit cell 210 (FIG. 2).

FIG. 4 is a schematic diagram of a footer 400 of an SRAM in accordancewith some embodiments. Footer 400 includes a power down transistor 410.Footer further includes a sleep leg 420. Footer 400 is configured toconnect an SRAM to the reference voltage. Footer 400 is configured toconserve power during periods of time when the SRAM is not in use.Footer 400 includes an ability to permit operation of the SRAM in a lowvoltage setting, e.g., a sleep mode, and to completely interrupt powerto the SRAM. In some embodiments, sleep leg 420 is omitted. Inembodiments which do not include sleep leg 420, footer 400 is not ableto permit operation of the SRAM in a low voltage setting.

Power down transistor 410 is configured to interrupt a power supply tothe SRAM in response to a power down bar PDB signal. A source of powerdown transistor 410 is connected to the reference. A drain of power downtransistor 410 is connected to the SRAM. In operation, power down barsignal PDB is logically high during operation of the SRAM. During apower down state of the SRAM, power down bar signal PDB falls tologically low and power to the SRAM is interrupted. During the low powersetting, power down bar signal PDB is logically low to preventconnection of the SRAM to the reference through power down transistor410.

Sleep leg 420 includes a sleep transistor 422 configured to receive asleep bar signal SLPB. Sleep transistor 422 is connected in series witha diode-connected sleep transistor 424. A drain of sleep transistor 422is connected to the SRAM. A source of diode-connected sleep transistor424 is connected to the reference voltage. In operation, a logical stateof sleep bar signal SLPB is either logically high or logically low.During the power down state, sleep bar signal SLPB is logically low tointerrupt power to the SRAM through sleep transistor 422. During the lowpower setting, sleep bar signal SLPB is logically high to connect theSRAM to the reference voltage through sleep transistor 422 anddiode-connected sleep transistor 424. Diode-connected sleep transistor424 acts a resistor to reduce an amount of power available to the SRAMto conserve power. In some embodiments, sleep leg 420 includes more thanone diode-connected sleep transistor in order to adjust the powersupplied to the SRAM during the low power setting.

FIG. 5 is a block diagram of a power management system 500 for an SRAMin accordance with some embodiments. Power management system 500includes an SRAM memory array 510. SRAM memory array 510 is connected toperipheral circuitry 520. SRAM memory array 510 is also connected to apower management block 530. Peripheral circuitry 520 is also connectedto power management block 530.

SRAM memory array 510 includes SRAM memory components, e.g., SRAM memory200 (FIG. 2). SRAM memory array 510 is configured to store bitinformation.

Peripheral circuitry 520 is configured to access SRAM memory array 510.In some embodiments, peripheral circuitry 520 includes an addressdecoder, error correction circuitry, clock circuitry, or other suitablecircuitry. In some embodiments, an operating voltage of peripheralcircuitry 520 is higher than an operating voltage of SRAM memory array510. In some embodiments, the operating voltage of peripheral circuitry520 is equal to the operating voltage of SRAM memory array 510.

Power management block 530 is configured to control power supplied toSRAM memory array 510 and power supplied to peripheral circuitry 520. Insome embodiments, power management block includes a footer, e.g., footer400. In some embodiments, a footer connected to peripheral circuitry 520has a same structure as a footer connected to SRAM memory array 510. Insome embodiments, the footer connected to peripheral circuitry 520 has adifferent structure from the footer connected to SRAM memory array 510.

FIG. 6 is a schematic diagram of a two-port bit cell 600 in accordancewith some embodiments. Two-port bit cell 600 includes cross-coupledinverters 610. Two-port bit cell 600 further includes a first pass gate620 a configured to selectively connect bit line BL to a first side ofcross-coupled inverters 610. Two-port bit cell 600 further includes asecond pass gate 620 b configured to selectively connect bit line barBLB to a second side of cross-coupled inverters 610. A read porttransistor 630 is configured to be selectively activated based on avoltage at the first side of cross-coupled inverters 610. A read bitline pass gate 640 is configured to selectively connect a read bit lineRBL to read port transistor 630.

Cross-coupled inverters 610 are similar to cross-coupled inverters 110(FIG. 1). First pass gate 620 a is similar to first pass gate 120 a.Second pass gate 620 b is similar to second pass gate 120 b.

In contrast with single-port bit cell 100 (FIG. 1), two-port bit cell600 includes read port transistor 630 and read bit line pass gate 640 tofacilitate a read operation and a write operation to be performed ontwo-port bit cell 600 during a same cycle. Read port transistor 630 is ap-type transistor. In some embodiments, read port transistor 630includes a three-dimensional gate structure, e.g., FinFET. A gate ofread port transistor 630 is connected to the first side of cross-coupledinverters 610 and to first pass gate 620 a. A source of read porttransistor 630 is connected to an operating voltage of two-port bit cell600. A drain of read port transistor 630 is connected to read bit linepass gate 640.

Read port transistor 630 is configured to selectively connect theoperating voltage to read bit line pass gate 640 based on a voltagelevel stored on the first side of cross-coupled inverters 610. Inoperation, when a logically high value is stored on the first side ofcross-coupled inverters 610, read port transistor 630 is non-conductiveand read bit line pass gate 640 is floating. When a logically low valueis stored on the first side of cross-coupled inverters 610, read porttransistor 630 is conductive and read bit line pass gate 640 isconnected to the operating voltage.

Read bit line pass gate 640 is a p-type transistor. In some embodiments,read bit line pass gate 640 includes a three-dimensional gate structure,e.g., FinFET. A gate of read bit line pass gate 640 is configured toreceive a read word line bar signal RWLB. A source of read bit line passgate 640 is connected to read port transistor 630. A drain of read bitline pass gate 640 is connected to read bit line RBL.

Read bit line pass gate 640 is configured to selectively connect theread bit line RBL to read port transistor 630. In operation, when readword line bar signal RWLB activates read bit line pass gate 640 and readbit line pass gate 640 is floating, a voltage level on read bit line RBLremains unchanged. When read word line bar signal RWLB activates readbit line pass gate 640 and read bit line pass gate 640 is connected tothe operating voltage, a voltage level on read bit line RBL is pulled upto the operating voltage. A voltage level on read bit line RBL is usableto determine bit information stored in cross-coupled inverters 610.

FIG. 7 is a schematic diagram of a two-port SRAM 700 in accordance withsome embodiments. Two-port SRAM 700 includes a two-port bit cell 710configured to receive a signal along word line bar WLB. Two-port bitcell 710 is connected to bit line BL and bit line bar BLB. Two-port SRAM700 further includes a discharge circuit 720 configured to discharge bitline BL and bit line bar BLB to a reference voltage in response to apre-discharge signal PRE. Two-port SRAM 700 further includescross-coupled transistors 730 connected to bit line BL and bit line barBLB. Cross-coupled transistors 730 are configured to help maintain avoltage level on bit line BL and bit line bar BLB. A write multiplexer740 is also connected to bit line BL and bit line bar BLB. Writemultiplexer 740 is configured to help maintain bit line BL or bit linebar BLB in a high logical state during a write operation. A flip-flop750 is connected to write multiplexer 740. Two-port SRAM 700 furtherincludes a read bit line RBL connected to two-port bit cell 710. Readbit line RBL is connected to a keeper circuit 780. Keeper circuit 780 isconfigured to maintain a voltage level on read bit line during a readoperation. Read bit line RBL is also connected to a discharge transistor790 configured to set a voltage level on the read bit line to thereference voltage in response to pre-discharge signal PRE. Read bit lineRBL is also connected to a first input of a NAND gate 795. An upper readbit line RBL U, which is connected to a second column two-port bit cell(not shown), is connected to a second input of NAND gate 795. An outputof NAND gate 795 is usable to determine bit information stored intwo-port bit cell 710.

Two-port bit cell 710 is configured to store bit information. Two-portbit cell 710 includes p-type pass gates. In some embodiments, two-portbit cell 710 is an eight transistor (8T) bit cell. In some embodiments,two-port bit cell 710 is similar to two-port bit cell 600 (FIG. 6). Insome embodiments, two-port bit cell 710 includes transistors havingthree dimensional gate structures, e.g., FinFET.

Two-port bit cell 710 is configured to receive a signal on word line barWLB in order to selectively receive information from bit line BL and bitline bar BLB. Due to the p-type pass gates, the bit information istransferred from bit line BL and bit line bar BLB when the signal onword line bar WLB is logically low. Two-port bit cell 710 is configuredto receive a signal on read word line bar RWLB in order to selectivelytransfer information to read bit line RBL. Due to the p-type read porttransistor and read bit line transistor, e.g., read port transistor 630(FIG. 6) and read bit line pass gate 640, the bit information istransferred to read bit line RBL when the signal on read word line barRWLB is logically low. In some embodiments, an inverter is used toconvert a logically high activation signal from peripheral circuitry toa logically low signal on word line bar WLB or read word line bar RWLBto activate two-port bit cell 710 for a write operation or a readoperation. The inverter facilitates use of two-port SRAM 700 inintegrated circuits without adjustments to the peripheral circuitrywhich are designed for use with bit cells having n-type pass gates andn-type read port transistors and read bit line transistors.

Pre-discharge circuit 720 has a similar structure as pre-dischargecircuit 220. Cross-coupled transistors 730 have a similar structure ascross-coupled transistor 230. Write multiplexer 740 has a similarstructure as write multiplexer 240. Flip-flop 750 has a similarstructure as flip-flop 250.

Keeper circuit 780 includes a first n-type keeper transistor 782 havinga gate connected to an output of NAND gate 795. A drain of first n-typekeeper transistor 782 is connected to read bit line RBL. A source offirst n-type keep transistor 782 is connected to a drain of a secondn-type keeper transistor 784. A gate of second n-type keeper transistor784 is configured to receive a keeper enabling signal KPR. A source ofsecond n-type keeper transistor 784 is connected to the referencevoltage.

Keeper circuit 780 is configured to help maintain a voltage level onread bit line RBL during a read operation. Keeper 780 is configured toprovide sufficient current to compensate leakage current from other bitcells connected to read bit line. Use of n-type transistors in keepercircuit 780 helps to compensate for current leakage, as a result readcorrectness is guaranteed in comparison with the design without keepercircuits.

In operation, when an output of NAND gate 795 is logically high andkeeper enabling signal KPR is logically high, read bit line RBL isconnected to the reference voltage through first n-type keepertransistor 782 and second n-type keeper transistor 784. When either theoutput of NAND gate 795 is logically low or keeper enabling signal KPRis logically low, read bit line RBL is disconnected from the referencevoltage.

Discharge transistor 790 includes a gate configured to receivepre-discharge signal PRE. A source of discharge transistor 790 isconnected to the reference voltage. A drain of discharge transistor 790is connected to read bit line RBL.

Discharge transistor 790 is configured to selectively connect read bitline RBL to the reference voltage to discharge a voltage level on theread bit line.

In operation, when pre-discharge signal PRE is logically high, read bitline RBL is connected to the reference voltage through dischargetransistor 790. In some embodiments, discharge transistor 790 isactivated prior to a read operation to set read bit line RBL to avoltage level equal to the reference voltage.

FIG. 8 is a schematic diagram of a dual-port bit cell 800 in accordancewith some embodiments. In contrast with single-port bit cell 100 (FIG.1), dual-port bit cell 800 includes a third pass gate 820 c and a fourthpass gate 820 d in addition to a first pass gate 820 a and a second passgate 820 b. The addition of third pass gate 820 c and fourth pass gate820 d helps to facilitate performing a read operation and a writeoperation on dual-port bit cell 800 during a same cycle. First pass gate820 a and third pass gate 820 c are connected to a first side ofcross-coupled inverters 810. First pass gate 820 a is configured toselectively connect the first side of cross-coupled inverters 810 to afirst bit line A_BL. Third pass gate 820 c is configured to selectivelyconnect the first side of cross-coupled inverters 810 to a second bitline B_BL. Second pass gate 820 b and fourth pass gate 820 d areconnected to a second side of cross-coupled inverters 810. Second passgate 820 b is configured to selectively connect the second side ofcross-coupled inverters 810 to a first bit line bar A_BLB. Fourth passgate 820 d is configured to selectively connect the second side ofcross-coupled inverters 810 to a second bit line bar B_BLB.

A gate of first pass gate 820 a and a gate of second pass gate 820 b areconfigured to receive a signal on a first word line bar A_WLB. A gate ofthird pass gate 820 c and a gate of fourth pass gate 820 d areconfigured to receive a signal on a second word line bar B_WLB.

Dual-port bit cell 800 includes p-type pass gates. In some embodiments,first pass gate 820 a; second pass gate 820 b; third pass gate 820 c;and fourth pass gate 820 d are all PMOS transistors. In someembodiments, first pass gate 820 a; second pass gate 820 b; third passgate 820 c; and fourth pass gate 820 d include three-dimensional gatestructures, e.g. FinFET.

In contrast with bit cells which include n-type transistors for passgates, dual-port bit cell 800 is connected to first bit line A_BL; firstbit line bar A_BLB; second bit line B_BL; and second bit line bar B_BLBby a logically low signal at a gate of first pass gate 820 a; secondpass gate 820 b; third pass gate 820 c; and fourth pass gate 820 d,respectively.

By using p-type transistors for first pass gate 820 a; second pass gate820 b; third pass gate 820 c; and fourth pass gate 820 d for scaled downsemiconductor devices, bit information stored in cross-coupled inverters110 is conveyed to first bit line A_BL; first bit line bar A_BLB; secondbit line B_BL; or second bit line bar B_BLB more rapidly in comparisonwith scaled down semiconductor devices which include n-type transistorsfor pass gates.

FIG. 9 is a schematic diagram of a dual-port SRAM 900 in accordance withsome embodiments. Dual-port SRAM 900 includes a dual-port bit cell 910configured to receive a signal along first word line bar A_WLB andsecond word line bar B_WLB. Dual-port bit cell 810 is connected to firstbit line A_BL; first bit line bar A_BLB; second bit line B_BL; andsecond bit line bar B_BLB. Dual-port SRAM 900 further includes a firstdischarge circuit 920 a configured to discharge first bit line A_BL andfirst bit line bar A_BLB to a reference voltage in response to a firstpre-discharge signal A_PRE. Dual-port SRAM 900 further includes a seconddischarge circuit 920 b configured to discharge second bit line B_BL andsecond bit line bar B_BLB to a reference voltage in response to a secondpre-discharge signal B_PRE. Dual-port SRAM 900 further includes firstcross-coupled transistors 930 a connected to first bit line A_BL andfirst bit line bar A_BLB. First cross-coupled transistors 930 a areconfigured to help maintain a voltage level on first bit line A_BL andfirst bit line bar A_BLB. Dual-port SRAM 900 further includes secondcross-coupled transistors 930 b connected to second bit line B_BL andsecond bit line bar B_BLB. Second cross-coupled transistors 930 b areconfigured to help maintain a voltage level on second bit line B_BL andsecond bit line bar B_BLB. A first write multiplexer 940 a is alsoconnected to first bit line A_BL and first bit line bar A_BLB. Firstwrite multiplexer 940 a is configured to help maintain first bit lineA_BL or first bit line bar A_BLB. in a high logical state during a writeoperation. A second write multiplexer 940 b is also connected to secondbit line B_BL and second bit line bar B_BLB. Second write multiplexer940 b is configured to help maintain second bit line B_BL or second bitline bar B_BLB. in a high logical state during a write operation. Afirst flip-flop 950 a is connected to first write multiplexer 940 a. Asecond flip-flop 950 b is connected to second write multiplexer 940 b.Dual-port SRAM 900 further includes a first read multiplexer 960 aconnected to first bit line A_BL and first bit line bar A_BLB. A firstread multiplexer 960 a is configured to transfer a voltage value closeto the reference voltage to a first sense amplifier 970 a during areading operation. First sense amplifier 970 a is also connected tofirst bit line A_BL and first bit line bar A_BLB. Dual-port SRAM 900further includes a second read multiplexer 960 b connected to second bitline B_BL and second bit line bar B_BLB. A second read multiplexer 960 bis configured to transfer a voltage value close to the reference voltageto a second sense amplifier 970 b during a reading operation. Secondsense amplifier 970 b is also connected to second bit line B_BL andsecond bit line bar B_BLB.

Dual-port bit cell 910 is configured to store bit information. Dual-portbit cell 910 includes p-type pass gates. In some embodiments, dual-portbit cell 910 is an eight transistor (8T) bit cell. In some embodiments,dual-port bit cell 910 is similar to dual-port bit cell 800 (FIG. 8). Insome embodiments, dual-port bit cell 910 includes transistors havingthree dimensional gate structures, e.g., FinFET.

Dual-port bit cell 910 is configured to receive a signal on first wordline bar A_WLB and second word line bar B_WLB in order to be selectivelyconnected to first bit line A_BL; first bit line bar A_BLB; second bitline B_BL; or second bit line bar B_BLB. In some embodiments, aninverter is used to convert a logically high activation signal fromperipheral circuitry to a logically low signal on first word line barA_WLB or second word line bar B_WLB to activate dual-port bit cell 910for a write operation or a read operation. The inverter facilitates useof dual-port SRAM 900 in integrated circuits without adjustments to theperipheral circuitry which are designed for use with bit cells havingn-type pass gates.

First pre-discharge circuit 920 a and second pre-discharge circuit 920 beach have a similar structure as pre-discharge circuit 220 (FIG. 2).First cross-coupled transistors 930 a and second cross-coupledtransistor 930 b each have a similar structure as cross-coupledtransistor 230. First write multiplexer 940 a and second writemultiplexer 940 b each have a similar structure as write multiplexer240. First flip-flop 950 a and second flip-flop 950 b each have asimilar structure as flip-flop 250. First sense amplifier 970 a andsecond sense amplifier 970 b each have a similar structure as senseamplifier 270.

FIG. 10 is a flow chart of a method 1000 of using an SRAM in accordancewith some embodiments. Method 100 begins with pre-discharging at leastone data line in operation 1002. Pre-discharging at least one data lineincludes setting a voltage level on the at least one data line to thereference voltage. In some embodiments, the at least one data lineincludes bit line BL and bit line bar BLB (FIG. 2). In some embodiments,the at least one data line includes read bit line RBL (FIG. 7). In someembodiments, the at least one data line includes first write line barA_WLB and second write line bar B_WLB in order to be selectivelyconnected to first bit line A_BL; first bit line bar A_BLB; second bitline B_BL; and second bit line bar B_BLB (FIG. 9).

In some embodiments, the at least one data line is discharged usingpre-discharge circuit 220 (FIG. 2) or pre-discharge circuit 720 (FIG.7). In some embodiments, the at least one data line is discharged usingdischarge transistor 790. In some embodiments, the at least one dataline is discharged using first pre-discharge circuit 920 a or secondpre-discharge circuit 920 b (FIG. 9).

Method 1000 continues with operation 1004 in which a bit cell isactivated. In some embodiments, the bit cell is a single-port bit cell,e.g., single-port bit cell 210 (FIG. 2). In some embodiments, the bitcell is a two-port bit cell, e.g., two-port bit cell 710 (FIG. 7). Insome embodiments, the bit cell is a dual-port bit cell, e.g., dual-portbit cell 910 (FIG. 9).

In some embodiments, the bit cell is activated by a signal on word linebar WLB (FIG. 2). In some embodiments, the bit cell is activated by asignal on read word line bar RWLB (FIG. 7). In some embodiments, the bitcell is activated by a signal on first word line bar A_WLB or secondword line bar B_WLB (FIG. 9).

In operation 1006, bit information is exchanged between the at least onedata line and the bit cell. In a read operation, bit information istransferred from the bit cell to the at least one data line. In someembodiments, the bit information is transferred from the bit cell to abit line or a bit line bar using a p-type pass gate. In someembodiments, the bit information is transferred from the bit cell to aread bit line using a p-type read port transistor. In a write operation,bit information is transferred from the at least one data line to thebit cell. The bit information is transferred from a bit line or a bitline bar to the bit cell through a p-type pass gate.

Method 1000 continues with operation 1008, in which a voltage level onthe at least one data line is maintained. In some embodiments, thevoltage level on the at least one data line is maintained usingcross-coupled transistors 230 (FIG. 2) or cross-coupled transistors 730(FIG. 7). In some embodiments, the voltage level on the at least onedata line is maintained using keeper circuit 780. In some embodiments,the voltage level on the at least one data line is maintained usingfirst cross-coupled transistors 930 a or second cross-coupledtransistors 930 b (FIG. 9).

In operation 1010, the at least one data line is maintained at alogically high voltage level during a write operation. In someembodiments, bit line BL or bit line bar BLB is maintained at alogically high voltage by write multiplexer 240 (FIG. 2). In someembodiments, bit line BL or bit line bar BLB is maintained at alogically high voltage by write multiplexer 740 (FIG. 7). In someembodiments, first bit line A_BL or first bit line bar A_BLB ismaintained at a logically high voltage by first write multiplexer 940 a(FIG. 9). In some embodiments, second bit line B_BL or second bit linebar B_BLB is maintained at a logically high voltage by second writemultiplexer 940 b.

In operation 1012, bit information is transferred from the at least onedata line to a sense amplifier during a read operation. In someembodiments, the bit information is transferred from bit line BL or bitline bar BLB to sense amplifier 270 by read multiplexer 260 (FIG. 2). Insome embodiments, the bit information is transferred from first bit lineA_BL or first bit line bar A_BLB to first sense amplifier 270 a by firstread multiplexer 960 a (FIG. 9). In some embodiments, the bitinformation is transferred from second bit line B_BL or second bit linebar B_BLB to second sense amplifier 270 b by second read multiplexer 960b.

In operation 1014, bit information is transferred to a NAND gate duringa read operation. In some embodiments, the bit information istransferred to NAND gate 795 from read bit line RBL (FIG. 7).

One of ordinary skill in the art would recognize that operations areable to be removed or that additional operations are able to be added tomethod 1000 without departing from the scope of this description. One ofordinary skill in the art would also recognize that an order ofoperations in method 1000 is able to be adjusted without departing fromthe scope of this description.

In some embodiments, a method of performing a write operation on an SRAMbit cell includes activating the bit cell by supplying a signal to ap-type pass gate of the bit cell, the signal causing the p-type passgate to be in a conductive state, using a p-type transistor of a writemultiplexer to maintain a data line at a logically high voltage, andtransferring bit information from the data line to the activated bitcell using the p-type pass gate.

In some embodiments, a method of performing a read operation on an SRAMbit cell includes activating the bit cell by supplying a signal to ap-type pass gate of the bit cell, the signal causing the p-type passgate to be in a conductive state, and transferring bit information fromthe activated bit cell to a data line using the p-type pass gate.

In some embodiments, a method of performing a write operation on an SRAMbit cell includes activating the bit cell by supplying a signal to firstand second p-type pass gates of the bit cell, the signal causing each ofthe first and second p-type pass gates to be in a conductive state,transferring complementary bit information from the activated bit cellto a first data line using the first p-type pass gate and to a seconddata line using the second p-type pass gate, and transferring thecomplementary bit information from the first and second data lines to asense amplifier using n-type transistors of a read multiplexer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method of performing a write operation on astatic random access memory (SRAM) bit cell, the method comprising:activating the bit cell by supplying a signal to a p-type pass gate ofthe bit cell, the signal causing the p-type pass gate to be in aconductive state; using a p-type transistor of a write multiplexer tomaintain a data line at a logically high voltage; and transferring bitinformation from the data line to the activated bit cell using thep-type pass gate.
 2. The method of claim 1, wherein the transferring thebit information from the data line to the activated bit cell using thep-type pass gate comprises using a p-type, fin field-effect-transistor(FinFET) pass gate.
 3. The method of claim 1, wherein the supplying thesignal to the p-type pass gate comprises using an inverter to convert alogically high activation signal from peripheral circuitry to alogically low voltage.
 4. The method of claim 3, further comprisinginterrupting power to the peripheral circuitry using an n-typetransistor of a footer before or after performing the write operation.5. The method of claim 1, wherein the using the p-type transistor of thewrite multiplexer to maintain the data line at the logically highvoltage comprises using the p-type transistor of the write multiplexerto connect the data line to an output of a flip-flop.
 6. The method ofclaim 1, wherein the p-type pass gate of the bit cell is a first p-typepass gate of the bit cell, the activating the bit cell comprisessupplying the signal to a second p-type pass gate of the bit cell, thedata line is a first data line, the transferring the bit informationfrom the data line to the activated bit cell comprises using the secondp-type pass gate to transfer complementary bit information from a seconddata line to the activated bit cell, the p-type transistor of the writemultiplexer is a first p-type transistor of the write multiplexer, andthe using the p-type transistor of the write multiplexer to maintain thedata line at the logically high voltage comprises: using the firstp-type transistor of the write multiplexer to connect the first dataline to a first output of a flip-flop; and using a second p-typetransistor of the write multiplexer to connect the second data line to asecond output of the flip-flop.
 7. The method of claim 1, furthercomprising using cross-coupled n-type transistors to maintain the dataline at the logically high voltage.
 8. A method of performing a readoperation on a static random access memory (SRAM) bit cell, the methodcomprising: activating the bit cell by supplying a signal to a p-typepass gate of the bit cell, the signal causing the p-type pass gate to bein a conductive state; and transferring bit information from theactivated bit cell to a data line using the p-type pass gate.
 9. Themethod of claim 8, wherein the transferring the bit information from theactivated bit cell to the data line using the p-type pass gate comprisesusing a p-type, fin field-effect-transistor (FinFET) pass gate.
 10. Themethod of claim 8, wherein the supplying the signal to the p-type passgate comprises using an inverter to convert a logically high activationsignal from peripheral circuitry to a logically low voltage.
 11. Themethod of claim 10, further comprising interrupting power to theperipheral circuitry using an n-type transistor of a footer before orafter performing the read operation.
 12. The method of claim 8, furthercomprising transferring the bit information from the data line to asense amplifier using an n-type transistor of a read multiplexer. 13.The method of claim 8, further comprising using an n-type transistor topre-discharge the data line to a reference voltage.
 14. The method ofclaim 8, wherein the transferring bit information from the activated bitcell to the data line comprises transferring the bit information to aninput of a NAND gate.
 15. The method of claim 14, further comprisingusing an output of the NAND gate and an n-type keeper transistor tomaintain a voltage on the data line.
 16. A method of performing a readoperation on a static random access memory (SRAM) bit cell, the methodcomprising: activating the bit cell by supplying a signal to first andsecond p-type pass gates of the bit cell, the signal causing each of thefirst and second p-type pass gates to be in a conductive state;transferring complementary bit information from the activated bit cellto a first data line using the first p-type pass gate and to a seconddata line using the second p-type pass gate; and transferring thecomplementary bit information from the first and second data lines to asense amplifier using n-type transistors of a read multiplexer.
 17. Themethod of claim 16, further comprising using a plurality of n-typetransistors to pre-discharge each of the first and second data lines toa reference voltage.
 18. The method of claim 16, wherein thetransferring the complementary bit information from the first and seconddata lines to the sense amplifier comprises using a pair of n-type passgates of the sense amplifier to transfer the complementary bitinformation from the read multiplexer to a pair of cross-coupledinverters of the sense amplifier.
 19. The method of claim 18, furthercomprising using a plurality of n-type pre-discharge transistors of thesense amplifier to pre-discharge each terminal of the cross-coupledinverters to a reference voltage.
 20. The method of claim 16, furthercomprising using a pair of cross-coupled n-type transistors to maintainvoltage levels on the first and second data lines.